Methods of fabricating crystalline silicon, thin film transistors, and solar cells
Patent No. 7,943,447
Issued: May 17, 2011
Inventor: Kakkad; Ramesh (Hsinchu, TW)
The present invention includes methods to crystallize amorphous silicon. A structure including a conductive film with at least one conductive layer in thermal contact with an amorphous silicon (a-Si) layer to be crystallized is exposed to an alternating or varying magnetic field. The conductive film is more easily heated by the alternative or varying magnetic field, which, in-turn, heats the a-Si film and crystallizes it while keeping the substrate at a low enough temperature to avoid damage to or bending of the substrate. The method can be applied to the fabrication of many semiconductor devices, including thin film transistors and solar cells.
Reference to Related Applications
This application claims one or more inventions which were disclosed in Provisional Application No. 60/935,332, filed Aug. 8, 2007, entitled "METHODS OF FABRICATING CRYSTALLINE SILICON FILMS, THIN FILM TRANSISTORS, AND SOLAR CELLS". The benefit under 35 USC 119(e) of the United States provisional application is hereby claimed, and the aforementioned application is hereby incorporated herein by reference.
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